The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Nov. 09, 2018
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Andre P. Labonte, Mechanicville, NY (US);
Catherine B Labelle, Schenectady, NY (US);
Chanro Park, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/311 (2013.01); H01L 23/528 (2013.01);
Abstract
A method of fabricating an interconnect structure of a semiconductor device is provided having a first conductive line and forming a second conductive line over the first conductive line. A via opening is formed in the second conductive line, and the via opening is aligned over the first conductive line. The via opening is filled with a conductive material to form an interconnect via and an upper portion of the interconnect via forms a portion of the second conductive line.