The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Oct. 12, 2016
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Schenectady, NY (US);
Hoon Kim, Clifton Park, NY (US);
Catherine B. Labelle, Schenectady, NY (US);
Lars W. Liebmann, Halfmoon, NY (US);
Chanro Park, Clifton Park, NY (US);
Min Gyu Sung, Latham, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods for a lithographic process used to pattern fins for fin-type field-effect transistors (FinFETs). A first plurality of hardmask sections may be formed, and sacrificial spacers may be formed on vertical sidewalls of the first plurality of hardmask sections. Each of the first plurality of hardmask sections is comprised of a first material. Gaps between the sacrificial spacers are filled with a second material, which is selected to etch selectively to the first material, in order to define a second plurality of hardmask sections each comprised of the second material.