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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Christopher Michael Prindle

USPTO Granted Patents = 17 

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 114(Granted Patents)


Location History:

  • Poughkeppsie, NY (US) (2017 - 2018)
  • Poughkeepsie, NY (US) (2009 - 2020)

Company Filing History:

goldMedal16 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2009-2020

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17 patents (USPTO):
1. 10734525 - Gate-all-around transistor with spacer support and methods of forming same (2020-08-04),
2. 10699965 - Removal of epitaxy defects in transistors (2020-06-30),
3. 10388770 - Gate and source/drain contact structures positioned above an active region of a transistor device (2019-08-20),
4. 10388747 - Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structure (2019-08-20),
5. 10290738 - Methods of forming epi semiconductor material on a recessed fin in the source/drain regions of a FinFET device (2019-05-14),
6. 10170544 - Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region (2019-01-01),
7. 10068978 - Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression (2018-09-04),
8. 9876077 - Methods of forming a protection layer on an isolation region of IC products comprising FinFET devices (2018-01-23),
9. 9806078 - FinFET spacer formation on gate sidewalls, between the channel and source/drain regions (2017-10-31),
10. 9685384 - Devices and methods of forming epi for aggressive gate pitch (2017-06-20),
11. 9640533 - Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression (2017-05-02),
12. 9496354 - Semiconductor devices with dummy gate structures partially on isolation regions (2016-11-15),
13. 9236452 - Raised source/drain EPI with suppressed lateral EPI overgrowth (2016-01-12),
14. 9230802 - Transistor(s) with different source/drain channel junction characteristics, and methods of fabrication (2016-01-05),
15. 9184263 - Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices (2015-11-10),

Title: Christopher Michael Prindle - Innovative Inventor from Poughkeepsie

Introduction: Christopher Michael Prindle is a renowned inventor based in Poughkeepsie, NY, known for his groundbreaking contributions to various technological fields.

Latest Patents: Christopher Michael Prindle holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his commitment to creating a more sustainable future.

Career Highlights: With over two decades of experience in the innovation industry, Christopher Michael Prindle has worked with leading research institutions and companies to develop cutting-edge technologies that have revolutionized the way we live and work.

Collaborations: Throughout his career, Christopher Michael Prindle has collaborated with top engineers, scientists, and designers to bring his inventions to life, fostering a culture of creativity and innovation in the industry.

Conclusion: Christopher Michael Prindle's passion for innovation and his dedication to creating impactful solutions have solidified his reputation as a visionary inventor in Poughkeepsie and beyond.

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