The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Mar. 19, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Chanro Park, Clifton Park, NY (US);

Christopher M. Prindle, Poughkeepsie, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/7682 (2013.01); H01L 21/76843 (2013.01); H01L 29/41775 (2013.01); H01L 29/41791 (2013.01); H01L 29/6653 (2013.01); H01L 29/7851 (2013.01);
Abstract

One illustrative IC product disclosed herein includes a transistor device including a gate structure positioned above an active region, first and second conductive source/drain structures positioned adjacent opposite sidewalls of the gate structure and an insulating material positioned laterally between the gate structure and each of the first and second conductive source/drain structures. The product also includes first and second air gaps positioned adjacent opposite sidewalls of the gate structure, a gate contact structure that is positioned entirely above the active region and conductively coupled to the gate structure and a source/drain contact structure that is positioned entirely above the active region and conductively coupled to at least one of the first and second conductive source/drain structures.


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