The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Jul. 29, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Xiuyu Cai, Niskayuna, NY (US);

Ajey Poovannummoottil Jacob, Watervliet, NY (US);

Andreas Knorr, Wappingers Falls, NY (US);

Christopher Prindle, Poughkeepsie, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/311 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41758 (2013.01); H01L 21/28518 (2013.01); H01L 21/31111 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/42372 (2013.01); H01L 29/45 (2013.01); H01L 29/456 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01);
Abstract

One illustrative method disclosed herein includes removing the sidewall spacers and a gate cap layer so as to thereby expose an upper surface and sidewalls of a sacrificial gate structure, forming an etch stop layer above source/drain regions of a device and on the sidewalls and upper surface of the sacrificial gate structure, forming a first layer of insulating material above the etch stop layer, removing the sacrificial gate structure so as to define a replacement gate cavity that is laterally defined by portions of the etch stop layer, forming a replacement gate structure in the replacement gate cavity, and forming a second gate cap layer above the replacement gate structure.


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