Wappingers Falls, NY, United States of America

Andreas Knorr

USPTO Granted Patents = 36 (Patent Applications = 4)

Average Co-Inventor Count = 3.0

ph-index = 11

Forward Citations = 349(Granted Patents)

Location History:

Singapore, SG (2016)
Saratoga Springs, TX (US) (2017)
Wappingers Falls, NY (US) (2007 - 2019)
Saratoga Springs, NY (US) (2016 - 2021)

Company Filing History:

Globalfoundries Singapore Pte. Ltd.

patents

1 out of 12,883

Advanced Micro Devices Corporation

patents

Years Active: 2007-2021

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36 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10937693 - Methods, apparatus and system for a local interconnect feature over an active region in a finFET device (2021-03-02),

2. 10644157 - Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods (2020-05-05),

3. 10475899 - Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby (2019-11-12),

4. 10424657 - Tri-gate FinFET device (2019-09-24),

5. 10411010 - Tall single-fin FIN-type field effect transistor structures and methods (2019-09-10),

6. 10381459 - Transistors with H-shaped or U-shaped channels and method for forming the same (2019-08-13),

7. 10304833 - Method of forming complementary nano-sheet/wire transistor devices with same depth contacts (2019-05-28),

8. 10290549 - Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same (2019-05-14),

9. 10164041 - Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby (2018-12-25),

10. 10062617 - Method and structure for SRB elastic relaxation (2018-08-28),

11. 9929157 - Tall single-fin fin-type field effect transistor structures and methods (2018-03-27),

12. 9780178 - Methods of forming a gate contact above an active region of a semiconductor device (2017-10-03),

13. 9691897 - Three-dimensional semiconductor transistor with gate contact in active region (2017-06-27),

14. 9614056 - Methods of forming a tri-gate FinFET device (2017-04-04),

15. 9576857 - Method and structure for SRB elastic relaxation (2017-02-21),

Title: Andreas Knorr - Innovative Inventor from Wappingers Falls

Introduction: Andreas Knorr is a renowned inventor based in Wappingers Falls, NY, known for his groundbreaking contributions to various industries.

Latest Patents: Andreas Knorr holds several patents in the fields of renewable energy, sustainable technology, and advanced materials, showcasing his commitment to innovation.

Career Highlights: With a career spanning over two decades, Andreas Knorr has worked with leading research institutions and companies to develop cutting-edge solutions that have revolutionized the way we approach challenges in the modern world.

Collaborations: Throughout his career, Andreas Knorr has collaborated with top engineers, scientists, and inventors, fostering a culture of creativity and excellence in all his projects.

Conclusion: Andreas Knorr's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

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4 patents pending:

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