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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Andreas Knorr

This inventor holds 36 USPTO granted patents and 4 published patent applications, primarily in FinFET Technology. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation, Globalfoundries Singapore Pte. Ltd.. Active years: 2007-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Andreas Knorr. Retrieved from https://idiyas.com/inventor/andreas-knorr-2zk4tra4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 

% Patents Active = 66.7

Average Co-Inventor Count = 3.0

ph-index = 11

Forward Citations = 353(Granted Patents)


Location History:

  • Singapore, SG (2016)
  • Saratoga Springs, TX (US) (2017)
  • Wappingers Falls, NY (US) (2007 - 2019)
  • Saratoga Springs, NY (US) (2016 - 2021)

Company Filing History:

goldMedal34 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 13,168 
 
Advanced Micro Devices Corporation
 patents
bronzeMedal1 out of 1,060 
 
Globalfoundries Singapore Pte. Ltd.
 patents

Years Active: 2007-2021

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Areas of Expertise:
FinFET Devices
Gate-All-Around
Tri-Gate
Transistor Structures
Integrated Circuits
Semiconductor Fabrication
Isolation Techniques
Epitaxy Methods
36 patents (USPTO):Explore Patents
1. 10937693 - Methods, apparatus and system for a local interconnect feature over an active region in a finFET device (2021-03-02),
2. 10644157 - Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods (2020-05-05),
3. 10475899 - Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby (2019-11-12),
4. 10424657 - Tri-gate FinFET device (2019-09-24),
5. 10411010 - Tall single-fin FIN-type field effect transistor structures and methods (2019-09-10),
6. 10381459 - Transistors with H-shaped or U-shaped channels and method for forming the same (2019-08-13),
7. 10304833 - Method of forming complementary nano-sheet/wire transistor devices with same depth contacts (2019-05-28),
8. 10290549 - Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same (2019-05-14),
9. 10164041 - Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby (2018-12-25),
10. 10062617 - Method and structure for SRB elastic relaxation (2018-08-28),
11. 9929157 - Tall single-fin fin-type field effect transistor structures and methods (2018-03-27),
12. 9780178 - Methods of forming a gate contact above an active region of a semiconductor device (2017-10-03),
13. 9691897 - Three-dimensional semiconductor transistor with gate contact in active region (2017-06-27),
14. 9614056 - Methods of forming a tri-gate FinFET device (2017-04-04),
15. 9576857 - Method and structure for SRB elastic relaxation (2017-02-21),

Title: Andreas Knorr - Innovative Inventor from Wappingers Falls

Introduction: Andreas Knorr is a renowned inventor based in Wappingers Falls, NY, known for his groundbreaking contributions to various industries.

Latest Patents: Andreas Knorr holds several patents in the fields of renewable energy, sustainable technology, and advanced materials, showcasing his commitment to innovation.

Career Highlights: With a career spanning over two decades, Andreas Knorr has worked with leading research institutions and companies to develop cutting-edge solutions that have revolutionized the way we approach challenges in the modern world.

Collaborations: Throughout his career, Andreas Knorr has collaborated with top engineers, scientists, and inventors, fostering a culture of creativity and excellence in all his projects.

Conclusion: Andreas Knorr's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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