The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Oct. 02, 2018
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Niskayuna, NY (US);
Andreas Knorr, Saratoga Springs, NY (US);
Haiting Wang, Clifton Park, NY (US);
Hui Zang, Guilderland, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
At least one method, apparatus and system disclosed herein involves forming local interconnect regions during semiconductor device manufacturing. A plurality of fins are formed on a semiconductor substrate. A gate region is over a portion of the fins. A trench silicide (TS) region is formed adjacent a portion of the gate region. The TS region comprises a first TS metal feature and a second TS metal feature. A bi-layer self-aligned contact (SAC) cap is formed over a first portion of the TS region and electrically coupled to a portion of the gate region. A portion of the bi-layer SAC cap is removed to form a first void. A first local interconnect feature is formed in the first void.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile