The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Oct. 28, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Andreas Knorr, Wappingers Falls, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/8234 (2006.01); H01L 27/11 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/785 (2013.01); H01L 29/7841 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/1104 (2013.01);
Abstract

One illustrative method disclosed herein includes, among other things, forming a fin that is positioned above and vertically spaced apart from an upper surface of a semiconductor substrate, the fin having an upper surface, a lower surface and first and second side surfaces, wherein an axis of the fin in a height direction of the fin is oriented substantially parallel to the upper surface of the substrate, and wherein a first side surface of the fin contacts a first insulating material, forming a gate structure around the upper surface, the second side surface and the lower surface of the fin, and forming a gate contact structure that is conductively coupled to the gate structure.


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