The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Mar. 28, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Christopher M. Prindle, Poughkeepsie, NY (US);

Emilie Bourjot, Cohoes, NY (US);

Laertis Economikos, Wappingers Falls, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 23/535 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 21/764 (2013.01); H01L 23/535 (2013.01); H01L 29/0649 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01);
Abstract

One illustrative integrated circuit product disclosed herein includes a transistor device comprising a T-shaped gate structure positioned above an active region defined in a semiconducting substrate, the T-shaped portion of the gate structure comprising a relatively wider upper portion and a relatively narrower lower portion, and first and second conductive source/drain structures positioned adjacent opposite sidewalls of the T-shaped gate structure. In this example, the product also includes first and second air gaps positioned adjacent opposite sidewall of the T-shaped gate structure, wherein each of the air gaps is positioned between at least the lower portion of one of the sidewalls of the T-shaped gate structure and the adjacent conductive source/drain structure.


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