The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Nov. 02, 2016
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Schenectady, NY (US);
Christopher Prindle, Poughkeepsie, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Pietro Montanini, Guilderland, NY (US);
Soon-Cheon Seo, Glenmont, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
FinFET spacer formation includes, for example, providing an intermediate semiconductor structure having a substrate having one or more fin having a first and a second plurality of gates disposed thereon, and a first plurality of spacers disposed on sides of the first and second plurality of gates, depositing a first liner on the structure, depositing a fill material at a level along inner portions of the first liner between the gates adjacent to the one or more fin, removing outer portions of the first spacers and the first liner away from the fill material, the remaining portions of the first spacers and the first liner defining a first thickness, and depositing a second liner having a second thickness over the gates and over the remaining portions of the first spacers and the first liner, and the fill material, and wherein the first thickness is greater than the second thickness.