The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Mar. 15, 2013
Applicants:

Globalfoundries Inc., Grand Cayman, KY;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Daniel Pham, Clifton Park, NY (US);

Xiuyu Cai, Niskayuna, NY (US);

Balasubramanian Pranatharthiharan, Watervliet, NY (US);

Pranita Kulkarni, Hopewell Junction, NY (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4232 (2013.01); H01L 21/28247 (2013.01); H01L 29/78 (2013.01);
Abstract

One method includes forming a recessed gate/spacer structure that partially defines a spacer/gate cap recess, forming a gate cap layer in the spacer/gate cap recess, forming a gate cap protection layer on an upper surface of the gate cap layer, and removing portions of the gate cap protection layer, leaving a portion of the gate cap protection layer positioned on the upper surface of the gate cap layer. A device disclosed herein includes a gate/spacer structure positioned in a layer of insulating material, a gate cap layer positioned on the gate/spacer structure, wherein sidewalls of the gate cap layer contact the layer of insulating material, and a gate cap protection layer positioned on an upper surface of the gate cap layer, wherein the sidewalls of the gate cap protection layer also contact the layer of insulating material.


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