The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
May. 23, 2012
Bruce B. Doris, Brewster, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Steven J. Holmes, Guilderland, NY (US);
Ali Khakifirooz, Slingerlands, NY (US);
Pranita Kulkarni, Slingerlands, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Raghavasimhan Sreenivasan, Schenectady, NY (US);
Stefan Schmitz, Ballston Spa, NY (US);
Bruce B. Doris, Brewster, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Steven J. Holmes, Guilderland, NY (US);
Ali Khakifirooz, Slingerlands, NY (US);
Pranita Kulkarni, Slingerlands, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Raghavasimhan Sreenivasan, Schenectady, NY (US);
Stefan Schmitz, Ballston Spa, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming an electrical device that includes forming a high-k gate dielectric layer over a semiconductor substrate that is patterned to separate a first portion of the high-k gate dielectric layer that is present on a first conductivity device region from a second portion of the high-k gate dielectric layer that is present on a second conductivity device region. A connecting gate conductor is formed on the first portion and the second portion of the high-k gate dielectric layer. The connecting gate conductor extends from the first conductivity device region over the isolation region to the second conductivity device region. One of the first conductivity device region and the second conductivity device region may then be exposed to an oxygen containing atmosphere. Exposure with the oxygen containing atmosphere modifies a threshold voltage of the semiconductor device that is exposed.