Schenectady, NY, United States of America

Raghavasimhan Sreenivasan

USPTO Granted Patents = 39 (Patent Applications = 8)

Average Co-Inventor Count = 4.3

ph-index = 6

Forward Citations = 124(Granted Patents)

Location History:

Albany, NY (US) (2014)
Fremont, CA (US) (2015)
Armonk, NY (US) (2017)
Schenectady, NY (US) (2014 - 2019)

Company Filing History:

29 out of 164,108

International Business Machines Corporation

Renesas Electronics Corporation

patents

where one patent can have more than one assignee

Years Active: 2014-2019

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39 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10475886 - Modified fin cut after epitaxial growth (2019-11-12),

2. 9812556 - Semiconductor device and method of manufacturing the semiconductor device (2017-11-07),

3. 9793379 - FinFET spacer without substrate gouging or spacer foot (2017-10-17),

4. 9728649 - Semiconductor device including embedded crystalline back-gate bias planes, related design structure and method of fabrication (2017-08-08),

5. 9653573 - Replacement metal gate including dielectric gate material (2017-05-16),

6. 9496282 - Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition (2016-11-15),

7. 9472576 - Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition (2016-10-18),

8. 9417501 - Electrically controlled optical fuse and method of fabrication (2016-08-16),

9. 9391069 - MIM capacitor with enhanced capacitance formed by selective epitaxy (2016-07-12),

10. 9379135 - FinFET semiconductor device having increased gate height control (2016-06-28),

11. 9368343 - Reduced external resistance finFET device (2016-06-14),

12. 9331073 - Epitaxially grown quantum well finFETs for enhanced pFET performance (2016-05-03),

13. 9324709 - Self-aligned gate contact structure (2016-04-26),

14. 9312273 - Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition (2016-04-12),

15. 9299617 - Locally isolated protected bulk FinFET semiconductor device (2016-03-29),

Title: Raghavasimhan Sreenivasan: A Pioneer in Semiconductor Innovation

Introduction

Raghavasimhan Sreenivasan is a distinguished inventor based in Schenectady, NY, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 39 patents, he has established himself as a key player in the innovation landscape.

Latest Patents

Two of Raghavasimhan's latest patents highlight his expertise in semiconductor device manufacturing:

1. **Modified Fin Cut After Epitaxial Growth** - This patent describes a method of forming a gate located above multiple fin regions of a semiconductor device. It encompasses the removal of unwanted fin structures after epitaxially growing junctions, enhancing the efficiency and effectiveness of semiconductor devices.

2. **Semiconductor Device and Method of Manufacturing the Semiconductor Device** - This innovation specifies a method for manufacturing a semiconductor device that involves the creation of several fin structures on a substrate, including diffusion regions. It details the formation of an epitaxial layer over the fin structures, ensuring a uniform height, and planarizes the upper surface by methods like etch back or reflow annealing.

Career Highlights

Raghavasimhan has had a remarkable career, working for notable companies such as IBM and Globalfoundries Inc. His work at these leading organizations has allowed him to contribute to groundbreaking advancements in semiconductor technology, thereby influencing the industry significantly.

Collaborations

Throughout his career, Raghavasimhan has collaborated with other talented individuals, including Kangguo Cheng and Ali Khakifirooz. These collaborations have fostered a rich exchange of ideas, leading to innovative solutions and patents that push the boundaries of semiconductor technology.

Conclusion

Raghavasimhan Sreenivasan's contributions to the field of semiconductors are noteworthy, with a robust patent portfolio that reflects his innovative spirit. His work continues to influence future developments in the semiconductor industry, solidifying his legacy as a key innovator in this domain.

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