The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Dec. 02, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Thomas N. Adam, Slingerlands, NY (US);
Kangguo Cheng, Slingerlands, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Alexander Reznicek, Troy, NY (US);
Raghavasimhan Sreenivasan, Schenectady, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/845 (2013.01); H01L 29/0649 (2013.01);
Abstract
FinFET devices and methods of making the same. A structure includes: a substrate with a buried insulator, a plurality of fins over the buried insulator, and a nitride material filing spaces between the plurality of fins, wherein the plurality of fins remain uncovered by the nitride.