The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Dec. 16, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Sivananda K. Kanakasabapathy, Niskayuna, NY (US);
Fee Li Lie, Albany, NY (US);
Soon-Cheon Seo, Glenmont, NY (US);
Raghavasimhan Sreenivasan, Schenectady, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/16 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 29/7848 (2013.01); H01L 21/3086 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of forming a gate located above multiple fin regions of a semiconductor device. The method may include removing unwanted fin structures after epitaxially growing junctions.
Kanakasabapathy, Sivananda. (2019). Modified fin cut after epitaxial growth (U.S. Patent No. 10475886). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10475886
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile