The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Dec. 03, 2015
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Pouya Hashemi, White Plains, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Alexander Reznicek, Troy, NY (US);
Raghavasimhan Sreenivasan, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An on-chip capacitor with enhanced capacitance and a method of forming the same are provided. An epitaxial process is employed to selectively form semiconductor material nodules on portions of a semiconductor material nodule nucleation layer that is present atop a semiconductor substrate. The semiconductor material nodules have an increased surface area for forming a capacitor structure thereon. A metal-insulator-metal capacitor structure is then formed surrounding each semiconductor material nodule. The resultant semiconductor structure (i.e., on-chip capacitor) has enhanced capacitance without increasing the size of the chip or the fabrication cost.