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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9331073 B1

PDFFull Text
Date of Patent:
May. 03, 2016

Filed:

Sep. 26, 2014

Epitaxially grown quantum well finfets for enhanced pfet performance

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Marc A. Bergendahl, Troy, NY (US);

James J. Demarest, Rensselaer, NY (US);

Hong He, Schenectady, NY (US);

Seth L. Knupp, Schenectady, NY (US);

Raghavasimhan Sreenivasan, Schenectady, NY (US);

Sean Teehan, Rensselaer, NY (US);

Allan W. Upham, Waterford, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

David Zwick

Steven Meyers

Primary Examiner:

Tony Tran

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 29/12 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02535 (2013.01); H01L 21/02592 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 29/045 (2013.01); H01L 29/0653 (2013.01); H01L 29/122 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method of forming a quantum well having a conformal epitaxial well on a {100} crystallographic orientated fin. The method may include: forming fins in a {100} crystallographic oriented substrate; forming a conformal well on the fins using epitaxial growth; and forming a conformal barrier on the conformal well using epitaxial growth.

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