The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Dec. 27, 2013
Renesas Electronics Corporation, Kawasaki-shi, JP;
International Business Machines Corporation, Armonk, NY (US);
Shogo Mochizuki, Kawasaki, JP;
Gen Tsutsui, Kawasaki, JP;
Raghavasimhan Sreenivasan, Armonk, NY (US);
Pranita Kerber, Armonk, NY (US);
Qiqing C. Ouyang, Armonk, NY (US);
Alexander Reznicek, Armonk, NY (US);
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of fin structures on a substrate, the plurality of fin structures including a diffusion region, forming an epitaxial layer on the plurality of fin structures in an area of the diffusion region such that a height of the upper surface of the epitaxial layer over plurality of fin structures is substantially equal to the height of the upper surface of the epitaxial layer between the plurality of fin structures, and planarizing the upper surface of the epitaxial layer by one of etch back and reflow annealing.