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For the Inventor, By the Inventor

Glenmont, NY, United States of America

Gen Tsutsui

USPTO Granted Patents = 38 

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 56(Granted Patents)


Location History:

  • Kanagawa, JP (2012 - 2013)
  • Kawasaki, JP (2017)
  • Delmar, NY (US) (2018 - 2019)
  • Albany, NY (US) (2013 - 2021)
  • Glenmont, NY (US) (2017 - 2023)

Company Filing History:

goldMedal35 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal5 out of 7,524 
 
Renesas Electronics Corporation
 patents
where one patent can have more than one assignee

Years Active: 2012-2025

where 'Filed Patents' based on already Granted Patents

38 patents (USPTO):
1. 12446320 - Bottom contact with self-aligned spacer for stacked semiconductor devices (2025-10-14),
2. 12402352 - Unipolar-FET implementation in stacked-FET CMOS (2025-08-26),
3. 12119264 - Non-step nanosheet structure for stacked field-effect transistors (2024-10-15),
4. 11830946 - Bottom source/drain for fin field effect transistors (2023-11-28),
5. 11616140 - Vertical transport field effect transistor with bottom source/drain (2023-03-28),
6. 11282962 - Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) (2022-03-22),
7. 11276781 - Bottom source/drain for fin field effect transistors (2022-03-15),
8. 11183427 - Differing device characteristics on a single wafer by selective etch (2021-11-23),
9. 11056588 - Vertical transport field effect transistor with bottom source/drain (2021-07-06),
10. 11037905 - Formation of stacked vertical transport field effect transistors (2021-06-15),
11. 10971626 - Interface charge reduction for SiGe surface (2021-04-06),
12. 10957646 - Hybrid BEOL metallization utilizing selective reflection mask (2021-03-23),
13. 10937648 - Gate stack designs for analog and logic devices in dual channel Si/SiGe CMOS (2021-03-02),
14. 10892181 - Semiconductor device with mitigated local layout effects (2021-01-12),
15. 10685866 - Fin isolation to mitigate local layout effects (2020-06-16),

Title: The Innovative Journey of Gen Tsutsui

Introduction: Gen Tsutsui, a visionary inventor based in Glenmont, NY (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Gen Tsutsui holds several patents in various technological domains, including artificial intelligence, renewable energy, and medical devices. His most recent patent focuses on a revolutionary method for enhancing solar panel efficiency through nanotechnology.

Career Highlights: Throughout his illustrious career, Gen Tsutsui has been recognized for his innovative spirit and problem-solving abilities. He has worked with renowned research institutions and leading tech companies to bring his ideas to life. His inventions have not only improved existing technologies but have also paved the way for new advancements in the industry.

Collaborations: Gen Tsutsui has collaborated with top engineers, scientists, and designers to develop cutting-edge solutions to complex challenges. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: In conclusion, Gen Tsutsui's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventions continue to inspire and shape the future of various industries, making him a true pioneer in the field of invention.

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