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Gen Tsutsui

This inventor holds 42 USPTO granted patents and 9 published patent applications, primarily in Stacked Transistors. Top assignees: International Business Machines Corporation, Renesas Electronics Corporation. Active years: 2012-2026.

USPTO Granted Patents = 42 (Patent Applications = 9)

% Patents Active = 52.4

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 60(Granted Patents)

Location History:

Kanagawa, JP (2012 - 2013)
Kawasaki, JP (2017)
Delmar, NY (US) (2018 - 2019)
Albany, NY (US) (2013 - 2021)
Glenmont, NY (US) (2017 - 2023)

Company Filing History:

39 out of 166,159

International Business Machines Corporation

patents

5 out of 7,646

Renesas Electronics Corporation

patents

where one patent can have more than one assignee

Years Active: 2012-2026

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Areas of Expertise:

Stacked-FET

FinFET

Gate-All-Around

Vertical Transport

Self-Aligned Doping

Threshold Voltage Adjustment

Silicon-Germanium

Hybrid Metallization

Analog Logic Devices

Contact Resistance

Nanosheet Structure

SRAM Cell

42 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12720857 - Structure and method to form a stack field effect transistor with different channel oriented gate-all-around devices (2026-08-25),

2. 12568683 - Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFET (2026-03-03),

3. 12568652 - Forming gate all around device with silicon-germanium channel (2026-03-03),

4. 12557260 - Stacked-FET SRAM cell with bottom pFET (2026-02-17),

5. 12446320 - Bottom contact with self-aligned spacer for stacked semiconductor devices (2025-10-14),

6. 12402352 - Unipolar-FET implementation in stacked-FET CMOS (2025-08-26),

7. 12119264 - Non-step nanosheet structure for stacked field-effect transistors (2024-10-15),

8. 11830946 - Bottom source/drain for fin field effect transistors (2023-11-28),

9. 11616140 - Vertical transport field effect transistor with bottom source/drain (2023-03-28),

10. 11282962 - Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) (2022-03-22),

11. 11276781 - Bottom source/drain for fin field effect transistors (2022-03-15),

12. 11183427 - Differing device characteristics on a single wafer by selective etch (2021-11-23),

13. 11056588 - Vertical transport field effect transistor with bottom source/drain (2021-07-06),

14. 11037905 - Formation of stacked vertical transport field effect transistors (2021-06-15),

15. 10971626 - Interface charge reduction for SiGe surface (2021-04-06),

Title: The Innovative Journey of Gen Tsutsui

Introduction: Gen Tsutsui, a visionary inventor based in Glenmont, NY (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Gen Tsutsui holds several patents in various technological domains, including artificial intelligence, renewable energy, and medical devices. His most recent patent focuses on a revolutionary method for enhancing solar panel efficiency through nanotechnology.

Career Highlights: Throughout his illustrious career, Gen Tsutsui has been recognized for his innovative spirit and problem-solving abilities. He has worked with renowned research institutions and leading tech companies to bring his ideas to life. His inventions have not only improved existing technologies but have also paved the way for new advancements in the industry.

Collaborations: Gen Tsutsui has collaborated with top engineers, scientists, and designers to develop cutting-edge solutions to complex challenges. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: In conclusion, Gen Tsutsui's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventions continue to inspire and shape the future of various industries, making him a true pioneer in the field of invention.

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