The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Feb. 14, 2022
International Business Machines Corporation, Armonk, NY (US);
Heng Wu, Guilderland, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Gen Tsutsui, Glenmont, NY (US);
Kangguo Cheng, Schenectady, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a vertical transport fin field effect transistor device is provided. The method includes forming vertical fins on a substrate, depositing a protective liner on the sidewalls of the vertical fins, and removing a portion of the substrate to form a support pillar beneath at least one of the vertical fins. The method further includes etching a cavity in the support pillar of the at least one of the vertical fins, and removing an additional portion of the substrate to form a plinth beneath the support pillar of the vertical fin. The method further includes growing a bottom source/drain layer on the substrate adjacent to the plinth, and forming a diffusion plug in the cavity, wherein the diffusion plug is configured to block diffusion of dopants from the bottom source/drain layer above a necked region in the support pillar.