The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Sep. 29, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Shogo Mochizuki, Mechanicville, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Gen Tsutsui, Glenmont, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01);
Abstract
Embodiments herein include semiconductor structures that may include a semiconductor structure for improving the switching speed of a first transistor. The first transistor may include a first source/drain (S/D), a metal gate, a spacer between the first S/D and the metal gate, and a first nanosheet channel. The first nanosheet channel may include: a gate section with silicon-germanium (SiGe) surrounded by the metal gate; and a junction section comprising silicon surrounded by the spacer.