The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Oct. 05, 2022
International Business Machines Corporation, Armonk, NY (US);
Gen Tsutsui, Glenmont, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Ruilong Xie, Niskayuna, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A semiconductor structure is presented including a bottom field effect transistor (FET) including a plurality of bottom source/drain (S/D) epi regions, a top FET including a plurality of top S/D epi regions, a bonding dielectric layer disposed directly between the bottom FET and the top FET, and a node contact advantageously extending from a bottom S/D epi region of the plurality of bottom S/D epi regions of the bottom FET through the bonding dielectric layer and into the top FET. The bottom FET includes an inverter gate. The top FET electrically connects to back-end-of-line (BEOL) components and the bottom FET electrically connects to a backside power delivery network (BSPDN).