The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Apr. 08, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Heng Wu, Guilderland, NY (US);
Gen Tsutsui, Glenmont, NY (US);
Lan Yu, Voorheesville, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/823418 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/66666 (2013.01);
Abstract
A vertical field effect transistor structure having at least two vertically oriented fins extending from a substrate. The vertical field effect transistor structure further includes a first source/drain region disposed in the substrate between the two vertically oriented fins and under each of the fins. The outer ends of the first source/drain region are in contact with outer ends of the fins. A portion of the first source/drain region extends beyond the fins.