The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jun. 23, 2022
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Heng Wu, Santa Clara, CA (US);
Min Gyu Sung, Latham, NY (US);
Liqiao Qin, Albany, NY (US);
Gen Tsutsui, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the invention include a single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFET. A PFET comprising at least one silicon germanium channel is formed. An NFET comprising at least one silicon channel is formed, the PFET being positioned laterally to the NFET, the at least one silicon channel and the at least one silicon germanium channel being staggered in a vertical direction.