The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 22, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Gen Tsutsui, Glenmont, NY (US);

Albert M. Young, Fishkill, NY (US);

Su Chen Fan, Cohoes, NY (US);

Junli Wang, Slingerlands, NY (US);

Brent A Anderson, Jericho, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 88/00 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 88/00 (2025.01); H10D 64/01 (2025.01); H10D 64/251 (2025.01); H10D 84/85 (2025.01);
Abstract

An approach forming semiconductor structure composed of one or more stacked semiconductor devices that include at least a top semiconductor device, a bottom semiconductor device under the top semiconductor, and contacts to each of the semiconductor devices. The approach provides a stacked semiconductor structure where the bottom semiconductor device is wider than the top semiconductor device. The approach also provides the stacked semiconductor structure where the width of the top semiconductor device is the same as the width of the bottom semiconductor device. The approach includes forming a contact to a side of the bottom semiconductor device when the width of the top semiconductor device is the same as the bottom semiconductor device. The approach includes forming a contact to epitaxy grown on a portion of the top and a side of the bottom semiconductor device when the bottom semiconductor device is larger than the top semiconductor device.


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