The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
May. 18, 2012
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Pranita Kulkarni, Slingerlands, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Pranita Kulkarni, Slingerlands, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A buried-channel field-effect transistor includes a semiconductor layer formed on a substrate. The semiconductor layer includes doped source and drain regions and an undoped channel region. the transistor further includes a gate dielectric formed over the channel region and partially overlapping the source and drain regions; a gate formed over the gate dielectric; and a doped shielding layer between the gate dielectric and the semiconductor layer.