The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jun. 25, 2012
Bruce B. Doris, Brewster, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Balasubramanian S. Haran, Watervliet, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Pranita Kulkarni, Slingerlands, NY (US);
Arvind Kumar, Chappaqua, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Bruce B. Doris, Brewster, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Balasubramanian S. Haran, Watervliet, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Pranita Kulkarni, Slingerlands, NY (US);
Arvind Kumar, Chappaqua, NY (US);
Shom Ponoth, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Shallow trench isolation structures are provided for use with UTBB (ultra-thin body and buried oxide) semiconductor substrates, which prevent defect mechanisms from occurring, such as the formation of electrical shorts between exposed portions of silicon layers on the sidewalls of shallow trench of a UTBB substrate, in instances when trench fill material of the shallow trench is subsequently etched away and recessed below an upper surface of the UTBB substrate.