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Watervliet, NY, United States of America

Balasubramanian S Haran

USPTO Granted Patents = 84 (Patent Applications = 20)

Average Co-Inventor Count = 4.4

ph-index = 13

Forward Citations = 673(Granted Patents)

Forward Citations (Not Self Cited) = 657(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Watervilet, NY (US) (2013 - 2014)
Mount Kisco, NY (US) (2014)
Albany, NY (US) (2012 - 2016)
Watervliet, NY (US) (2010 - 2019)

Company Filing History:

66 out of 164,197

International Business Machines Corporation

17 out of 5,671

Globalfoundries Inc.

Globalfoundries U.S. 2 LLC

Years Active: 2010-2019

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Areas of Expertise:

FinFET Devices

CMOS Technology

Silicon-on-Insulator Transistors

Shallow Trench Isolation

Self-Aligned Contacts

Hybrid Orientation FinFET

Electrical Isolation Structures

Asymmetric MOSFETs

Dummy Fin Formation

Stress Enhanced Devices

Ultra-Thin Body Devices

Replacement Gate Technologies

84 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10388729 - Devices and methods of forming self-aligned, uniform nano sheet spacers (2019-08-20),

2. 9548356 - Shallow trench isolation structures (2017-01-17),

3. 9478549 - FinFET with dielectric isolation by silicon-on-nothing and method of fabrication (2016-10-25),

4. 9406790 - Suspended ring-shaped nanowire structure (2016-08-02),

5. 9406679 - Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate (2016-08-02),

6. 9406570 - FinFET device (2016-08-02),

7. 9368590 - Silicon-on-insulator transistor with self-aligned borderless source/drain contacts (2016-06-14),

8. 9299719 - CMOS with dual raised source and drain for NMOS and PMOS (2016-03-29),

9. 9275911 - Hybrid orientation fin field effect transistor and planar field effect transistor (2016-03-01),

10. 9269629 - Dummy fin formation by gas cluster ion beam (2016-02-23),

11. 9263466 - CMOS with dual raised source and drain for NMOS and PMOS (2016-02-16),

12. 9263465 - CMOS with dual raised source and drain for NMOS and PMOS (2016-02-16),

13. 9257531 - Self-aligned contact structure for replacement metal gate (2016-02-09),

14. 9257350 - Manufacturing process for finFET device (2016-02-09),

15. 9245965 - Uniform finFET gate height (2016-01-26),

Title: The Innovative Journey of Balasubramanian S Haran

Introduction: Balasubramanian S Haran is a pioneering inventor based in Watervliet, NY (US) known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Balasubramanian S Haran holds several patents in various technological domains, including advancements in renewable energy systems, artificial intelligence algorithms, and sustainable transportation solutions.

Career Highlights: With a career spanning over two decades, Balasubramanian S Haran has worked with leading tech companies and research institutions to develop cutting-edge technologies that have revolutionized the industry. His expertise in engineering and innovation has led to the successful implementation of numerous projects that have had a significant impact on society.

Collaborations: Throughout his career, Balasubramanian S Haran has collaborated with top researchers, engineers, and scientists from around the world to push the boundaries of technological innovation. His collaborative efforts have resulted in the development of innovative solutions that address some of the most pressing challenges of our time.

Conclusion: Balasubramanian S Haran's relentless pursuit of innovation and his passion for creating a positive change through technology have established him as a prominent figure in the world of inventions. His work continues to inspire future generations of inventors and engineers to push the limits of what is possible in the realm of technology.

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