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For the Inventor, By the Inventor

Watervliet, NY, United States of America

Balasubramanian S Haran

This inventor holds 84 USPTO granted patents and 20 published patent applications, primarily in FinFET Technology (CPC class H01L27-1211). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. 2 LLC. Active years: 2010-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Balasubramanian S Haran. Retrieved from https://idiyas.com/inventor/balasubramanian-s-haran

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 84 

% Patents Active = 44.0

Average Co-Inventor Count = 4.4

ph-index = 13

Forward Citations = 673(Granted Patents)

Forward Citations (Not Self Cited) = 657(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Watervilet, NY (US) (2013 - 2014)
  • Mount Kisco, NY (US) (2014)
  • Albany, NY (US) (2012 - 2016)
  • Watervliet, NY (US) (2010 - 2019)

Company Filing History:

goldMedal66 out of 166,425 
 
International Business Machines Corporation
 patents
silverMedal17 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents

Years Active: 2010-2019

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Areas of Expertise:
FinFET
CMOS
Shallow Trench Isolation
Dielectric Isolation
Self-Aligned Contacts
Multi-Gate Transistors
Nano Sheet Spacers
Silicon-On-Insulator
Threshold Voltage Integration
Robust Isolation
Dummy Fin Formation
Stress Enhanced Devices
84 patents (USPTO):Explore Patents
1. 10388729 - Devices and methods of forming self-aligned, uniform nano sheet spacers (2019-08-20),
2. 9548356 - Shallow trench isolation structures (2017-01-17),
3. 9478549 - FinFET with dielectric isolation by silicon-on-nothing and method of fabrication (2016-10-25),
4. 9406790 - Suspended ring-shaped nanowire structure (2016-08-02),
5. 9406679 - Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate (2016-08-02),
6. 9406570 - FinFET device (2016-08-02),
7. 9368590 - Silicon-on-insulator transistor with self-aligned borderless source/drain contacts (2016-06-14),
8. 9299719 - CMOS with dual raised source and drain for NMOS and PMOS (2016-03-29),
9. 9275911 - Hybrid orientation fin field effect transistor and planar field effect transistor (2016-03-01),
10. 9269629 - Dummy fin formation by gas cluster ion beam (2016-02-23),
11. 9263466 - CMOS with dual raised source and drain for NMOS and PMOS (2016-02-16),
12. 9263465 - CMOS with dual raised source and drain for NMOS and PMOS (2016-02-16),
13. 9257531 - Self-aligned contact structure for replacement metal gate (2016-02-09),
14. 9257350 - Manufacturing process for finFET device (2016-02-09),
15. 9245965 - Uniform finFET gate height (2016-01-26),

Title: The Innovative Journey of Balasubramanian S Haran

Introduction: Balasubramanian S Haran is a pioneering inventor based in Watervliet, NY (US) known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Balasubramanian S Haran holds several patents in various technological domains, including advancements in renewable energy systems, artificial intelligence algorithms, and sustainable transportation solutions.

Career Highlights: With a career spanning over two decades, Balasubramanian S Haran has worked with leading tech companies and research institutions to develop cutting-edge technologies that have revolutionized the industry. His expertise in engineering and innovation has led to the successful implementation of numerous projects that have had a significant impact on society.

Collaborations: Throughout his career, Balasubramanian S Haran has collaborated with top researchers, engineers, and scientists from around the world to push the boundaries of technological innovation. His collaborative efforts have resulted in the development of innovative solutions that address some of the most pressing challenges of our time.

Conclusion: Balasubramanian S Haran's relentless pursuit of innovation and his passion for creating a positive change through technology have established him as a prominent figure in the world of inventions. His work continues to inspire future generations of inventors and engineers to push the limits of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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