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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9478549 B1

PDFFull Text
Date of Patent:
Oct. 25, 2016

Filed:

Oct. 31, 2014

Finfet with dielectric isolation by silicon-on-nothing and method of fabrication

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Balasubramanian S. Haran, Watervliet, NY (US);

Shom Ponoth, Clifton Park, NY (US);

Theodorus Eduardus Standaert, Clifton Park, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:

Heslin Rothenberg Farley & Mesiti P.C.

George Blasiak

Primary Examiner:

Chuong A Luu

Assistant Examiner:

Rodolfo Fortich

Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/108 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10826 (2013.01); H01L 21/76224 (2013.01); H01L 21/76243 (2013.01); H01L 21/76283 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01);
Abstract

An improved finFET and method of fabrication using a silicon-on-nothing process flow is disclosed. Nitride spacers protect the fin sides during formation of cavities underneath the fins for the silicon-on-nothing (SON) process. A flowable oxide fills the cavities to form an insulating dielectric layer under the fins.

Find Patent Forward Citations

Cheng, Kangguo. (2016). Finfet with dielectric isolation by silicon-on-nothing and method of fabrication (U.S. Patent No. 9478549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9478549

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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