The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Oct. 31, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Balasubramanian S. Haran, Watervliet, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Theodorus Eduardus Standaert, Clifton Park, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/108 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10826 (2013.01); H01L 21/76224 (2013.01); H01L 21/76243 (2013.01); H01L 21/76283 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01);
Abstract
An improved finFET and method of fabrication using a silicon-on-nothing process flow is disclosed. Nitride spacers protect the fin sides during formation of cavities underneath the fins for the silicon-on-nothing (SON) process. A flowable oxide fills the cavities to form an insulating dielectric layer under the fins.