The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Apr. 27, 2015
Globalfoundries, Grand Cayman, KY;
Kangguo Cheng, Schenectady, NY (US);
Balasubramanian S. Haran, Watervliet, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Theodorus E. Standaert, Clifton Park, NY (US);
Tenko Yamashita, Schenectady, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method for fabricating a field effect transistor device includes removing a portion of a first semiconductor layer and a first insulator layer to expose a portion of a second semiconductor layer, wherein the second semiconductor layer is disposed on a second insulator layer, the first insulator layer is disposed on the second semiconductor layer, and the first semiconductor layer is disposed on the first insulator layer, removing portions of the first semiconductor layer to form a first fin disposed on the first insulator layer and removing portions of the second semiconductor layer to form a second fin disposed on the second insulator layer, and forming a first gate stack over a portion of the first fin and forming a second gate stack over a portion of the second fin.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile