The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jul. 10, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Balasubramanian S. Haran, Watervliet, NY (US);
Sanjay Mehta, Niskayuna, NY (US);
Shom Ponoth, Los Angeles, CA (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Stefan Schmitz, Ballston Spa, NY (US);
Theodorus E. Standaert, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/12 (2006.01); H01L 27/088 (2006.01); H01L 21/28 (2006.01); H01L 21/84 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 21/28008 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/66545 (2013.01);
Abstract
A structure including a first plurality of fins and a second plurality of fins etched from a semiconductor substrate, and a fill material located above the semiconductor substrate and between the first plurality of fins and the second plurality of fins, the fill material does not contact either the first plurality of fins or the second plurality of fins.