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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9269629 B1

PDFFull Text
Date of Patent:
Feb. 23, 2016

Filed:

Oct. 30, 2014

Dummy fin formation by gas cluster ion beam

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Balasubramanian S. Haran, Watervliet, NY (US);

Ali Khakifirooz, Los Altos, CA (US);

Shom Ponoth, Clifton Park, NY (US);

Theodorus Eduardus Standaert, Clifton Park, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Heslin Rothenberg Farley & Mesiti P.C.

Primary Examiner:

Yosef Gebreyesus

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02227 (2013.01); H01L 21/02238 (2013.01); H01L 21/02247 (2013.01); H01L 21/266 (2013.01); H01L 21/26506 (2013.01); H01L 21/26566 (2013.01); H01L 21/26586 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/6681 (2013.01); H01L 29/78 (2013.01); H01L 27/0207 (2013.01);
Abstract

FinFET structures with dielectric fins and methods of fabrication are disclosed. A gas cluster ion beam (GCIB) tool is used to apply an ion beam to exposed fins, which converts the fins from a semiconductor material such as silicon, to a dielectric such as silicon nitride or silicon oxide. Unlike some prior art techniques, where some fins are removed prior to fin merging, in embodiments of the present invention, fins are not removed. Instead, semiconductor (silicon) fins are converted to dielectric (nitride/oxide) fins where it is desirable to have isolation between groups of fins that comprise various finFET devices on an integrated circuit (IC).

Find Patent Forward Citations

Cheng, Kangguo. (2016). Dummy fin formation by gas cluster ion beam (U.S. Patent No. 9269629). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269629

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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