The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

May. 22, 2012
Applicants:

Kangguo Cheng, Schenectady, NY (US);

Ali Khakifirooz, Mountain View, CA (US);

Pranita Kulkarni, Slingerlands, NY (US);

Ghavam G. Shahidi, Pound Ridge, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Ali Khakifirooz, Mountain View, CA (US);

Pranita Kulkarni, Slingerlands, NY (US);

Ghavam G. Shahidi, Pound Ridge, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01);
Abstract

An electrical circuit, planar diode, and method of forming a diode and one or more CMOS devices on the same chip. The method includes electrically isolating a portion of a substrate in a diode region from other substrate regions. The method also includes recessing the substrate in the diode region. The method further includes epitaxially forming in the diode region a first doped layer above the substrate and epitaxially forming in the diode region a second doped layer above the first doped layer.


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