The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
May. 14, 2012
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Pranita Kulkarni, Slingerlands, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Pranita Kulkarni, Slingerlands, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Methods for forming a buried-channel field-effect transistor include doping source and drain regions on a substrate with a dopant having a first type; forming a doped shielding layer on the substrate in a channel region having a second doping type opposite the first type to displace a conducting channel away from a gate-interface region; forming a gate dielectric over the doped shielding layer; and forming a gate on the gate dielectric.