The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jul. 03, 2012
Kangguo Cheng, Guilderland, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Ali Khakifirooz, Slingerlands, NY (US);
Pranita Kulkarni, Slingerlands, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Ali Khakifirooz, Slingerlands, NY (US);
Pranita Kulkarni, Slingerlands, NY (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
An FET device structure has a Fin-FET device with a fin of a Si based material. An oxide element is abutting the fin and exerts pressure onto the fin. The Fin-FET device channel is compressively stressed due to the pressure on the fin. A further FET device structure has Fin-FET devices in a row. An oxide element extending perpendicularly to the row of fins is abutting the fins and exerts pressure onto the fins. Device channels of the Fin-FET devices are compressively stressed due to the pressure on the fins.