The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Dec. 12, 2000
Heemyong Park, LaGrangeville, NY (US);
Anda C. Mocuta, Wappingers Falls, NY (US);
Paul A. Ronsheim, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for fabricating an MOS device having a highly-localized halo region includes the formation of a first halo region at a first surface of a silicon substrate, and a second halo region at a second surface of the silicon substrate. The second surface of the silicon substrate is formed by anisotropically etching the first surface of the silicon substrate to remove a portion of the material from the substrate. Both the first and second halo regions are formed by low-energy ion implantation. For the fabrication of an n-channel device, boron is implanted at an energy of no more than about 1 keV. Upon implantation and a subsequent annealing process, the first and second halo regions form a continuous halo region within the semiconductor substrate.