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For the Inventor, By the Inventor

Lagrangeville, NY, United States of America

Heemyong Park

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.5

ph-index = 9

Forward Citations = 278(Granted Patents)


Company Filing History:

goldMedal11 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2001-2006

where 'Filed Patents' based on already Granted Patents

11 patents (USPTO):
1. 7009258 - Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon (2006-03-07),
2. 6891228 - CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture (2005-05-10),
3. 6828630 - CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture (2004-12-07),
4. 6808974 - CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions (2004-10-26),
5. 6734109 - Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon (2004-05-11),
6. 6566198 - CMOS structure with non-epitaxial raised source/drain and self-aligned gate and method of manufacture (2003-05-20),
7. 6562666 - Integrated circuits with reduced substrate capacitance (2003-05-13),
8. 6509241 - Process for fabricating an MOS device having highly-localized halo regions (2003-01-21),
9. 6429084 - MOS transistors with raised sources and drains (2002-08-06),
10. 6303450 - CMOS device structures and method of making same (2001-10-16),
11. 6268640 - Forming steep lateral doping distribution at source/drain junctions (2001-07-31),

Title: Innovator Spotlight: Heemyong Park - Pioneering Inventor in CMOS Technology

Introduction:

Heemyong Park, a distinguished inventor based in Lagrangeville, NY, has made significant contributions to the field of CMOS technology with a total of 11 patents under his belt. His expertise lies in creating innovative methods to improve the performance and controllability of CMOS structures on thin silicon-on-insulator (SOI) substrates.

Latest Patents:

One of Heemyong Park's latest patents includes a groundbreaking method for building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon. This invention enhances lateral etch encroachment control by implanting neutral ions into the source/drain regions, creating a well-defined amorphous/crystalline interface for improved device performance. Another notable patent is for a CMOS device on ultrathin SOI with a deposited raised source/drain, revolutionizing the manufacturing process to achieve source and drain regions thicker than the SOI wafer itself.

Career Highlights:

Heemyong Park has been an integral part of the renowned International Business Machines Corporation (IBM), where his groundbreaking research and inventions have significantly impacted the semiconductor industry. His relentless pursuit of innovation has led to the development of cutting-edge technologies that push the boundaries of CMOS device design and fabrication.

Collaborations:

Throughout his career, Heemyong Park has collaborated closely with esteemed colleagues such as Fariborz Assaderaghi and Dominic Joseph Schepis. Together, they have worked on various projects, sharing their expertise and passion for advancing CMOS technology to new heights.

Conclusion:

Heemyong Park's dedication to pushing the boundaries of CMOS technology and his relentless pursuit of innovation have cemented his reputation as a pioneering inventor in the field. His patented inventions not only demonstrate his technical prowess but also underscore his commitment to driving progress and excellence in semiconductor device design and fabrication.

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