The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Oct. 31, 2000
Applicant:
Inventors:
Heemyong Park, LaGrangeville, NY (US);
Fariborz Assaderaghi, Mahopac, NY (US);
Jack A. Mandelman, Stormville, NY (US);
Ghavam G. Shahidi, Yorktown Heights, NY (US);
Lawrence F. Wagner, Jr., Fishkill, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/176 ;
Abstract
Capacitance between source/drain and p-type substrate in SOI CMOS circuits is reduced by implanting an n-type layer below the oxide layer, thereby forming a fully depleted region that adds to the thickness of the oxide layer, while creating a junction capacitance region that reduces the total device to substrate capacitance.