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For the Inventor, By the Inventor

Fishkill, NY, United States of America

Lawrence F Wagner, Jr

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 372(Granted Patents)


Company Filing History:

goldMedal11 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1993-2011

where 'Filed Patents' based on already Granted Patents

11 patents (USPTO):
1. 7863691 - Merged field effect transistor cells for switching (2011-01-04),
2. 7139990 - Method of checking the layout versus the schematic of multi-fingered MOS transistor layouts using a sub-circuit based extraction (2006-11-21),
3. 6562666 - Integrated circuits with reduced substrate capacitance (2003-05-13),
4. 6490546 - Method for obtaining DC convergence for SOI FET models in a circuit simulation program (2002-12-03),
5. 6141632 - Method for use in simulation of an SOI device (2000-10-31),
6. 6023577 - Method for use in simulation of an SOI device (2000-02-08),
7. 5770881 - SOI FET design to reduce transient bipolar current (1998-06-23),
8. 5446312 - Vertical-gate CMOS compatible lateral bipolar transistor (1995-08-29),
9. 5371022 - Method of forming a novel vertical-gate CMOS compatible lateral bipolar (1994-12-06),
10. 5341023 - Novel vertical-gate CMOS compatible lateral bipolar transistor (1994-08-23),
11. 5258640 - Gate controlled Schottky barrier diode (1993-11-02),

Title: The Innovations of Lawrence F Wagner, Jr: A Pioneer in Integrated Circuit Technology

Introduction: Lawrence F Wagner, Jr., based in Fishkill, NY, is a distinguished inventor with an impressive portfolio of 11 patents. His contributions to integrated circuit technology have significantly advanced the field. This article explores his latest innovations, career highlights, and collaborations that have defined his impactful journey.

Latest Patents: Wagner's latest patents showcase his expertise in circuit design. One notable invention is the Merged Field Effect Transistor Cells for Switching. This innovative device incorporates multiple sets of series-connected field effect transistors, arranged symmetrically and in a linear fashion between two nodes. This design facilitates the merging of adjacent diffusion regions, resulting in a reduction in device size, wiring requirements, and side capacitance. Moreover, Wagner has developed a Method of Checking the Layout versus the Schematic of Multi-Fingered MOS Transistor Layouts using a Sub-Circuit Based Extraction. This method enhances the confidence level in layout physical verification by ensuring a complete and accurate geometric parameter comparison between the layout and the schematic model.

Career Highlights: Lawrence F Wagner, Jr. has made significant strides in his career, most notably through his work with International Business Machines Corporation (IBM). His innovative ideas and patent contributions have helped IBM remain at the forefront of integrated circuit technology and design.

Collaborations: Throughout his career, Wagner has collaborated with other notable inventors, including Fariborz Assaderaghi and Chang-Ming Hsieh. These partnerships have fostered a rich exchange of ideas and concepts, further advancing innovations in their collective field of expertise.

Conclusion: Lawrence F Wagner, Jr. exemplifies the spirit of innovation in the realm of integrated circuits. His 11 patents, including his latest advancements in merging field effect transistors and verification methods, underline his commitment to enhancing technology. As he continues his work at IBM, Wagner’s contributions will undoubtedly inspire future innovations in the industry.

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