The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2002
Filed:
May. 04, 1999
Richard Kimmel, Wappingers Falls, NY (US);
Lawrence F. Wagner, Jr., Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for obtaining accurate DC convergence in a DC phase of a circuit simulation program for models of field effect transistors (FETs) on a silicon-on-insulator (SOI) substrate. The process comprises running iterations of the DC phase of the circuit simulation program such that error criteria are satisfied, wherein the pseudo-time step changes at each iteration until it reaches a value such that a desired current value is achieved. DC convergence is also achieved by reducing the magnitude of the capacitive and/or charge elements connected to the floating body regions of the field effect transistors on the silicon-on-insulator substrate model during the DC phase to achieve a desired current value.