The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
May. 15, 2001
Heemyong Park, LaGrangeville, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Fariborz Assaderaghi, San Diego, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided for maximizing activation of a gate electrode while preventing source and drain regions from being excessively doped. The gate electrode is partially doped when exposed the source/drain implantation step. Then, the gate electrode is fully doped by the selective implantation step while the source/drain regions are blocked. Separate annealing steps are provided subsequent to the gate doping step and the source and drain implantation step.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile