The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Nov. 21, 2000
Applicant:
Inventors:
Heemyong Park, LaGrangeville, NY (US);
Anda C. Mocuta, Wappinger Falls, NY (US);
Werner Rausch, Stormville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
Disclosed is a method comprising providing a silicon surface with an underlying insulator layer, providing a plurality of gates adjacent to source/drain regions, growing source/drains between the said gates such that the source/drains are thicker in regions of larger gate-to-gate pitch, and doping the source/drains with one or more dopants such that the dopants abut the underlying insulator layer.