The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Jun. 20, 2001
Applicant:
Inventors:
Heemyong Park, LaGrangeville, NY (US);
Fariborz Assaderaghi, San Diego, CA (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ;
Abstract
In raised source/drain CMOS processing, the prior art problem of lateral epi growth on the gate stack interfering physically with the raised S/D structures and producing device characteristics that vary along the length of the gate and the problem of overetch of the STI oxide during the preclean step is solved by using a sacrificial nitride layer to block both the STI region and the gate stack, together with a process sequence in which the halo and extension implants are performed after the S/D implant anneal.