The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Jun. 10, 2003
Huajie Chen, Wappingers Falls, NY (US);
Dan Mocuta, LaGrangeville, NY (US);
Richard J. Murphy, Clinton Corners, NY (US);
Paul Ronsheim, Hopewell Junction, NY (US);
David Rockwell, Susquehanna, PA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is disclosed for forming an epitaxial layer on a front side of a substrate formed of a monocrystalline material, using a chemical vapor deposition system. In this method, a plurality of gettering wafers formed of a gettering material are arranged in the CVD system, such that the front side of each substrate is facing one of the gettering wafers. Impurities present in the CVD system during formation of the epitaxial layer are gettered by the gettering wafers. Alternatively, a layer of a gettering material is deposited on a back side of each of the plurality of substrates, and the substrates are arranged such that the front side of each substrate is facing the backside of another of the substrates. In another embodiment, a layer of a gettering material is deposited on an interior surface of the CVD system. Impurities removed from the CVD system during epitaxial formation include oxygen, water vapor and other oxygen-containing contaminants.