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For the Inventor, By the Inventor

Lagrangeville, NY, United States of America

Dan Mihai Mocuta

This inventor holds 21 USPTO granted patents and 6 published patent applications and 1 EPO patent. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2004-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dan Mihai Mocuta. Retrieved from https://idiyas.com/inventor/dan-mihai-mocuta

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 42.9


Average Co-Inventor Count = 3.8

ph-index = 8

Forward Citations = 727(Granted Patents)


Company Filing History:

goldMedal20 out of 166,325 
 
International Business Machines Corporation
 patents
silverMedal1 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2004-2017

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21 patents (USPTO):Explore Patents
1. 9673197 - FinFET with constrained source-drain epitaxial region (2017-06-06),
2. 9536879 - FinFET with constrained source-drain epitaxial region (2017-01-03),
3. 9461050 - Self-aligned laterally extended strap for a dynamic random access memory cell (2016-10-04),
4. 9443854 - FinFET with constrained source-drain epitaxial region (2016-09-13),
5. 9299780 - Constrained epitaxial source/drain regions on semiconductor-on-insulator finFET device (2016-03-29),
6. 9252215 - Constrained epitaxial source/drain regions on semiconductor-on-insulator finFET device (2016-02-02),
7. 9093275 - Multi-height multi-composition semiconductor fins (2015-07-28),
8. 9059194 - High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension control (2015-06-16),
9. 8168971 - Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain (2012-05-01),
10. 7723750 - MOSFET with super-steep retrograded island (2010-05-25),
11. 7691698 - Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain (2010-04-06),
12. 7550370 - Method of forming thin SGOI wafers with high relaxation and low stacking fault defect density (2009-06-23),
13. 7528027 - Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel (2009-05-05),
14. 7498602 - Protecting silicon germanium sidewall with silicon for strained silicon/silicon mosfets (2009-03-03),
15. 7268049 - Structure and method for manufacturing MOSFET with super-steep retrograded island (2007-09-11),

Title: Dan Mihai Mocuta - Pioneering Inventor from Lagrangeville, NY

Introduction: Dan Mihai Mocuta is a distinguished inventor hailing from Lagrangeville, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Dan Mihai Mocuta holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a career spanning over two decades, Dan Mihai Mocuta has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Dan Mihai Mocuta has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and excellence that has led to the successful implementation of numerous projects and inventions.

Conclusion: Dan Mihai Mocuta's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his reputation as a visionary inventor whose work continues to inspire and shape the future of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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