The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Dec. 06, 2013
Globalfoundries Inc., Grand Cayman, KY;
Byeong Y. Kim, Lagrangeville, NY (US);
Dan M. Mocuta, Lagrangeville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A self-aligned strap structure can be formed by forming trench capacitors and overlying trench top conductive material portions. End portions of fin mask structures overlie portions of the trench top conductive material portions. A dielectric spacer is formed around each end portions of the fin mask structure to cover additional areas of the trench top conductive material portions. An anisotropic etch is performed to recess portions of the trench top conductive material portions that are not covered by the fin mask structures or dielectric spacers. Conductive strap structures that are self-aligned to end portions of semiconductor fins are formed simultaneously with formation of the semiconductor fins. Access fin field effect transistors can be subsequently formed.