The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Oct. 23, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Brian J. Greene, Fishkill, NY (US);

Arvind Kumar, Beacon, NY (US);

Dan M. Mocuta, Lagrangeville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/3105 (2006.01); H01L 29/04 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/31053 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 29/045 (2013.01); H01L 29/165 (2013.01); H01L 29/6656 (2013.01); H01L 29/7848 (2013.01); H01L 29/7853 (2013.01); H01L 21/845 (2013.01);
Abstract

A method includes forming a plurality of fins on a substrate, conformally depositing a nitride liner above and in direct contact with the plurality of fins and the substrate, removing a top portion of the nitride liner above the plurality of fins to expose a top surface of the plurality of fins, forming a gate over a first portion of the plurality of fins, a second portion of the plurality of fins remains exposed, forming spacers on opposite sidewalls of the nitride liner on the second portion of the plurality of fins, removing the second portion of the plurality of fins to form a trench between opposing sidewalls of the nitride liner, and forming an epitaxial layer in the trench, the lateral growth of the epitaxial layer is constrained by the nitride liner to form constrained source-drain regions.


Find Patent Forward Citations

Loading…