The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Mar. 25, 2008
Huilong Zhu, Poughkeepsie, NY (US);
Mahender Kumar, Fishkill, NY (US);
Dan M. Mocuta, LaGrangeville, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Wenjuan Zhu, Fishkill, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Mahender Kumar, Fishkill, NY (US);
Dan M. Mocuta, LaGrangeville, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Wenjuan Zhu, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide or high-k material, is formed in the v-shape trench. Poly-Si is deposited on top of the layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile