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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9536879 B1

PDFFull Text
Date of Patent:
Jan. 03, 2017

Filed:

Jul. 09, 2014

Finfet with constrained source-drain epitaxial region

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Brian J. Greene, Wappingers Falls, NY (US);

Arvind Kumar, Beacon, NY (US);

Dan M. Mocuta, Lagrangeville, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

L. Jeffrey Kelly

Steven Meyers

Primary Examiner:

Tram H Nguyen

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/3105 (2006.01); H01L 29/04 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/31053 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 29/045 (2013.01); H01L 29/165 (2013.01); H01L 29/6656 (2013.01); H01L 29/7848 (2013.01); H01L 29/7853 (2013.01); H01L 21/845 (2013.01);
Abstract

A method includes forming a plurality of fins on a substrate, a gate is formed over a first portion of the plurality of fins with a second portion of the plurality of fins remaining exposed. Spacers are formed on opposite sidewalls of the second portion of the plurality of fins. The second portion of the plurality fins is removed to form a trench between the spacers. An epitaxial layer is formed in the trench. The spacers on opposite sides of the epitaxial layer constrain lateral growth of the epitaxial layer.

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