The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Aug. 07, 2001
Tze-Chiang Chen, Yorktown Heights, NY (US);
Thomas T. Hwang, Wappingers Falls, NY (US);
Mukesh V. Khare, White Plains, NY (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Anda C. Mocuta, LaGrangeville, NY (US);
Paul A. Ronsheim, Hopewell Junction, NY (US);
Ghavam G. Shahidi, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a self-aligned gettering region within an SOI substrate is provided. Specifically, the inventive method includes the steps of forming a disposable spacer on each vertical sidewall of a patterned gate stack region, the patterned gate stack region being formed on a top Si-containing layer of an SOI substrate; implanting gettering species into the top Si-containing layer not protected by the disposable spacer and patterned gate stack region; and removing the disposable spacer and annealing the implanted gettering species so as to convert said species into a gettering region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile